? semiconductor components industries, llc, 2012 october, 2012 ? rev. 0 1 publication order number: esd5482/d ESD5482MUT5G transient voltage suppressors micro ? packaged diodes for esd protection the esd5482 is designed to protect voltage sensitive components from esd. excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, this part is well suited for use in cellular phones, mp3 players, digital cameras and many other portable applications where board space comes at a premium. specification features ? low capacitance 5 pf ? low clamping voltage ? small body outline dimensions: 0.60 mm x 0.30 mm ? low body height: 0.3 mm ? stand ? off voltage: 3.3 v ? low leakage ? response time is < 1 ns ? iec61000 ? 4 ? 2 level 4 esd protection ? iec61000 ? 4 ? 4 level 4 eft protection ? these devices are pb ? free, halogen free/bfr free and are rohs compliant mechanical characteristics mounting position: any qualified max reflow temperature: 260 c device meets msl 1 requirements maximum ratings rating symbol value unit iec 61000 ? 4 ? 2 (esd) contact air 10 10 kv total power dissipation on fr ? 5 board (note 1) @ t a = 25 c thermal resistance, junction ? to ? ambient p d r ja 300 400 mw c/w junction and storage temperature range t j , t stg ? 55 to +150 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. see application note and8308/d for further description of survivability specs. device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com ESD5482MUT5G x3dfn2 (pb ? free) 15000 / tape & reel x3dfn2 case 152af marking diagram 1 cathode 2 anode pin 1 j = specific device code (rotated 90 clockwise) m j
ESD5482MUT5G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current *see application note and8308/d for detailed explanations of datasheet parameters. bi ? directional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol condition min typ max unit reverse working voltage v rwm 3.3 v breakdown voltage v br i t = 1 ma (note 2) 5.0 v reverse leakage current i r v rwm = 3.3 v < 1 50 na clamping voltage v c i pp = 1 a (note 3) 7.8 9.1 v esd clamping voltage v c per iec61000 ? 4 ? 2 see figures 1 and 2 junction capacitance c j v r = 0 v, f = 1 mhz v r = 0 v, f = 1 ghz 5.0 5.0 7.0 7.0 pf dynamic resistance r dyn tlp pulse 0.60 insertion loss f = 1 mhz f = 8.5 ghz 0.20 0.56 db 2. breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. non ? repetitive current pulse at 25 c, per iec61000 ? 4 ? 5 waveform. figure 1. esd clamping voltage screenshot positive 8 kv contact per iec61000 ? 4 ? 2 figure 2. esd clamping voltage screenshot negative 8 kv contact per iec61000 ? 4 ? 2
ESD5482MUT5G http://onsemi.com 3 typical characteristics 3.3 v figure 3. iv characteristics figure 4. cv characteristics v (v) vbias (v) 6 2 1 0 ? 2 ? 6 ? 8 ? 9 1e ? 11 1e ? 10 1e ? 09 1e ? 08 3 2 1 0 ? 1 ? 2 ? 3 ? 4 0 0.5 1.5 2.0 3.0 3.5 4.0 5.0 figure 5. rf insertion loss figure 6. capacitance over frequency frequency (hz) frequency (hz) 1e+06 ? 27 ? 24 ? 18 ? 15 ? 12 ? 6 0 3 3e+09 2.5e+09 2e+09 1.5e+09 1e+09 5e+08 0e+00 0 2 6 8 12 14 18 20 figure 7. positive tlp i ? v curve figure 8. negative tlp i ? v curve voltage (v) voltage (v) 18 14 12 10 8 4 2 0 0 2 4 6 8 12 14 16 ? 18 ? 14 ? 12 ? 8 ? 6 ? 4 ? 2 0 0 ? 2 ? 4 ? 6 ? 10 ? 12 ? 14 ? 16 i (a) c (pf) (db) capacitance (pf) current (a) current (a) ? 7 ? 5 ? 4 ? 3 ? 1345789 1e ? 07 1e ? 06 1e ? 05 1e ? 04 1e ? 03 1e ? 02 4 1.0 2.5 4.5 1e+07 1e+08 1e+09 ? 21 ? 9 ? 3 61620 10 ? 10 ? 16 ? 20 ? 8 4 10 16 0 v
ESD5482MUT5G http://onsemi.com 4 iec 61000 ? 4 ? 2 spec. level test voltage (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000 ? 4 ? 2 waveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 9. iec61000 ? 4 ? 2 spec 50 50 cable tvs oscilloscope esd gun figure 10. diagram of esd test setup the following is taken from application note and8308/d ? interpretation of datasheet parameters for esd devices. esd voltage clamping for sensitive circuit elements it is important to limit the voltage that an ic will be exposed to during an esd event to as low a voltage as possible. the esd clamping voltage is the voltage drop across the esd protection diode during an esd event per the iec61000 ? 4 ? 2 waveform. since the iec61000 ? 4 ? 2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. on semiconductor has developed a way to examine the entire voltage waveform across the esd protection diode over the time domain of an esd pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all esd protection diodes. for more information on how on semiconductor creates these screenshots and how to interpret them please refer to and8307/d. figure 11. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
ESD5482MUT5G http://onsemi.com 5 package dimensions x3dfn2, 0.62x0.32, 0.355p, (0201) case 152af issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. a b e d bottom view b e 2x l 2x 2x 0.035 c top view 2x 0.035 c 2x a a1 0.05 c 0.05 c c seating plane side view dim min max millimeters a 0.25 0.33 a1 ??? 0.05 b 0.22 0.28 d 0.62 bsc e 0.32 bsc e 0.355 bsc l 0.17 0.23 mounting footprint* dimensions: millimeters 0.74 1 0.30 0.31 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 2 1 see application note and8398/d for more mounting details a m 0.05 b c a m 0.05 b c 2x 2x recommended pin 1 indicator (optional) on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 esd5482/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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